Drift diffusion simulator for semiconductor devices
Author PatricioFarrell
6 Stars
Updated Last
12 Months Ago
Started In
September 2019

ChargeTransport.jl -- Simulating charge transport in semiconductors

Build status DOI

ChargeTransport.jl simulates charge transport in semiconductors. To this end, it discretizes the semiconductor drift-diffusion equations via the Voronoi finite volume method as implemented in VoronoiFVM.jl.

Special features

  • heterostructures
  • 1D, 2D and 3D simulations
  • stationary and transient simulations
  • IV curves and scan protocols
  • an arbitrary amount of charge carriers may be added
  • thermodynamically consistent, physics preserving numerical methods
  • different charge carrier statistics per species (Boltzmann, Blakemore, Fermi-Dirac)

ChargeTransport.jl is a free software. For research purposes you may use it under the terms of the GNU Affero General Public License (AGPL). As a company you may contact any of the authors directly to obtain a commercial license. If you use this package in your work, please cite it according to CITATION.bib.

The following papers rely on ChargeTransport.jl

[1.] D. Abdel, P. Farrell and J. Fuhrmann. Assessing the quality of the excess chemical potential flux scheme for degenerate semiconductor device simulation. Optical and Quantum Electronics 53 (163) (2021).

[2.] D. Abdel, P. Vágner, J. Fuhrmann and P. Farrell. Modelling charge transport in perovskite solar cells: Potential-based and limiting ion depletion. Electrochimica Acta 390 (2021).

[3.] D. Abdel, C. Chainais-Hillairet, P. Farrell and M. Herda. Numerical analysis of a finite volume scheme for charge transport in perovskite solar cells. preprint (2022).

[4.] D. Abdel, N. E. Courtier and P. Farrell. Volume exclusion effects in perovskite charge transport modeling. preprint (2022).

[5.] B. Spetzler, D. Abdel, F. Schwierz, M. Ziegler and P. Farrell. The role of mobile point defects in two-dimensional memristive devices. preprint (2023).